
Gelsinger-backed Nagare Labs’ Z2RAM promises SRAM speed at DRAM density
A Pat Gelsinger-backed Georgia Tech spinout, Nagare Labs, has unveiled Z2RAM technology that promises SRAM speed with DRAM density for AI chips.
The startup's latest published cell retains data for over 300 seconds at 85°C, with Gen 1 projected to offer 5x SRAM density across six stacked layers. This technology could deliver 14x DRAM speed and use 3x less read energy than traditional SRAM.
AI chips face significant bandwidth challenges, with manufacturers struggling to produce sufficient high-bandwidth memory (HBM) yields. Some companies are reportedly reducing HBM layers to improve yields, while heat management remains a critical concern.
Samsung's zHBM, which stacks DRAM directly on processors, is limited to approximately four layers due to heat constraints. Nagare Labs' Z2RAM could provide a more efficient solution by integrating memory directly on top of AI chips without these limitations.