Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comeback
Micron has disclosed its ambitious DRAM and NAND memory roadmaps for the coming years, featuring wafer bonding, new materials, High-NA EUV lithography, and 3D DRAM technologies.
As DRAM and 3D NAND technologies approach significant transformations, custom memory solutions are poised to become mainstream. AI developers increasingly face limitations with current offerings, driving demand for specialized memory and storage options.
Last month, Micron revealed its strategic plans for the next several years, incorporating innovative approaches like wafer bonding and new materials that enable smaller NAND cells. The company also detailed its adoption of High-NA EUV lithography and progress toward 3D DRAM development.
The most significant aspect of Micron's roadmap is its expansion of custom DRAM and NAND products. This shift addresses the growing need from AI developers for memory and storage solutions optimized specifically for their unique processor architectures and specialized workloads.
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