Micron plans to use wafer bonding and High-NA EUV for next-gen DRAM
Micron has abandoned 4F2 memory cells and will instead use wafer bonding with its upcoming 1ε DRAM process technology, adopting High-NA EUV lithography for future generations.
Having jettisoned 4F memory cells from its roadmap, Micron must use different methods to continue scaling its DRAM devices in the coming years to keep up with rivals planning to use smaller DRAM transistors towards the end of the decade.
Instead, the company intends to introduce wafer bonding with its upcoming 1ε DRAM process technology and adopt High-NA EUV lithography for subsequent generations.
New memory types
Meanwhile, Micron is developing new types of memory, including vertical high-bandwidth memory (vHBM) and vertical edge inference memory (vEIM), which will be integrated directly on top of processors.
Related
