Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance
Micron has announced its next-generation G11 3D NAND technology, promising 42 Gb/mm2 density and 5,400 MT/s interface speed, with mass production slated for late 2027.
Micron's G11 3D NAND represents a significant leap in storage technology, offering unprecedented density and performance. The company revealed at a recent event that this new memory technology will enter mass production in the second half of 2027.
The G11 NAND delivers three major improvements: it doubles storage density, increases I/O performance by 50% compared to Micron's current-generation NAND, and decreases power consumption. These advancements will enable SSDs with extreme capacity and speed.
Technology Approach
To achieve these aggressive goals, Micron plans to adopt wafer-on-wafer bonding technology, taking a page from competitor YMTC's book. The company is also developing new materials and denser memory cell architectures to extend 3D NAND scaling beyond the G11 generation.
This technological advancement comes as demand for higher-capacity storage continues to grow across data centers, consumer devices, and enterprise applications.
Related
