Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift
Micron has terminated development of 4F² DRAM technology after two decades of research, citing fundamental limitations and increased costs.
4F² DRAM technology, long considered a potential breakthrough in memory design, has been abandoned by Micron. The company concluded that the architecture offers no meaningful density advantages while increasing manufacturing complexity and costs. This decision comes after two decades of research and development into the technology.
Technical limitations
The path with 4F² DRAM is always been an option through time, and we have evaluated it and not pursued it due to increased complexity and cost through this past two-decade period of time.
DRAM featuring 4F² memory cells was expected to reduce cell area by 33% compared to conventional 6F² designs, potentially enabling more memory cells in the same physical space. However, Micron discovered fundamental scaling limitations that prevented the technology from becoming commercially viable.
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